Key Specs

SpecValueConditionSource
input_voltage_max_non_repetitive1300 Vmax non-repetitive reverse/forward blocking voltageDatasheet
input_voltage_max_repetitive1200 Vmax repetitive reverse/forward blocking voltageDatasheet
input_current_min10 µAminDatasheet
input_voltage_max_repetitive_at_125_celsius1200 Vmax repetitive reverse/forward blocking voltage at 125°CDatasheet
input_voltage_min_at_25_celsius1200 Vmin at 25°CDatasheet
input_voltage_min_at_125_celsius1200 Vmin at 125°CDatasheet
input_current_typ_at_25_celsius2 mAtyp at 25°CDatasheet
input_current_typ_at_125_celsius2 mAtyp at 125°CDatasheet
forward_voltage_drop_min_at_25_celsius1.30 Vmin at 25°CDatasheet
forward_voltage_drop_typ_at_125_celsius1.59 Vtyp at 125°CDatasheet
forward_voltage_drop_typ_at_25_celsius1.30 Vtyp at 25°CDatasheet
forward_voltage_drop_min_at_125_celsius1.26 Vmin at 125°CDatasheet
forward_voltage_drop_typ_at_150_celsius1.64 Vtyp at 150°CDatasheet
average_forward_current_max_at_125_celsius40 Amax at 125°CDatasheet
average_forward_current_max_at_150_celsius40 Amax at 150°CDatasheet
rms_forward_current_max63 AmaxDatasheet
threshold_voltage_at_150_celsius0.85 Vat 150°CDatasheet
slope_resistance_at_25_celsius9.9 mΩat 25°CDatasheet
thermal_resistance_junction_to_case_at_25_celsius0.4 K/Wat 25°CDatasheet
thermal_resistance_case_to_heatsink_at_25_celsius0.25 K/Wat 25°CDatasheet
total_power_dissipation_at_25_celsius310 Wat 25°CDatasheet
max_forward_surge_current_at_45_celsius520 Aat 45°CDatasheet
max_forward_surge_current_at_150_celsius440 Aat 150°CDatasheet
i2t_value_for_fusing_at_45_celsius1.35 kA²sat 45°CDatasheet
i2t_value_for_fusing_at_150_celsius970 A²sat 150°CDatasheet
junction_capacitance_at_25_celsius22 pFat 25°CDatasheet
max_gate_power_dissipation_at_150_celsius10 Wat 150°CDatasheet
max_gate_power_dissipation_at_300_us5 Wat 300µsDatasheet
average_gate_power_dissipation0.5 WDatasheet
critical_rate_of_rise_of_current_at_150_celsius150 A/µsat 150°CDatasheet
critical_rate_of_rise_of_current_at_200_us500 A/µsat 200µsDatasheet
critical_rate_of_rise_of_voltage_at_150_celsius500 V/µsat 150°CDatasheet
dissipation0.5 WDatasheet
gav_di_dt_critical_rate_of_rise_of_current150 A/µsDatasheet
gav_repetitive_current120 ArepetitiveDatasheet
gav_frequency50 HzDatasheet
cr_drm_rate_of_rise_of_voltage500 V/µsDatasheet
cr_drm_rate_of_rise_of_voltage_max⅔ VmaxDatasheet
cr_drm_rate_of_rise_of_voltage_typ⅔ VtypDatasheet
gd_drm_rate_of_rise_of_voltage_max⅔ VmaxDatasheet
gd_drm_rate_of_rise_of_voltage_typ⅔ VtypDatasheet
gd_drm_rate_of_rise_of_voltage_min⅔ VminDatasheet
gk_gate_trigger_voltage_max6 VmaxDatasheet
gk_gate_trigger_voltage_typ6 VtypDatasheet
gt_d_gate_trigger_voltage_min1.9 VminDatasheet
gt_d_gate_trigger_voltage_typ1.7 VtypDatasheet
gt_d_gate_trigger_voltage_max-40°C 1.9 VmaxDatasheet
gj_gate_trigger_current_typ30 mADatasheet
gt_d_gate_trigger_current_max-40°C 50 mAmaxDatasheet
gd_nontrigger_voltage_typ⅔ VDatasheet
gd_nontrigger_voltage_max0.2 VmaxDatasheet
i_latching_current_typ100 mADatasheet
i_holding_current_typ70 mADatasheet
t_gate_controlled_delay_typ2 µsDatasheet
t_turnoff_time_typ150 µsDatasheet
i_rms_current_per_terminal_min35 AminDatasheet
i_rms_current_per_terminal_typ35 AtypDatasheet
i_rms_current_per_terminal_max35 AmaxDatasheet
t_virtual_junction_temperature_min-40 °CminDatasheet
t_virtual_junction_temperature_typ150 °CDatasheet
t_virtual_junction_temperature_max150 °CmaxDatasheet
t_operation_temperature_min-40 °CminDatasheet
t_operation_temperature_typ125 °CDatasheet
t_operation_temperature_max125 °CmaxDatasheet
t_storage_temperature_min-40 °CminDatasheet
t_storage_temperature_typ150 °CDatasheet
t_storage_temperature_max150 °CmaxDatasheet
weight_min1.5 gminDatasheet
mounting_force_with_clip_min20 NminDatasheet
mounting_force_with_clip_typ60 NDatasheet
creepage_distance_on_surface_min4.2 mmminDatasheet
creepage_distance_on_surface_typ4.2 mmtypDatasheet
creepage_distance_on_surface_max4.2 mmmaxDatasheet
voltage_rating_min-40 °C 6 VminDatasheet
package_outline_width_typ2.54 (0.100)Datasheet
package_outline_length_typ20.9 (0.553.0) mm (Inches)Datasheet
package_outline_width_max2.54 (0.100)maxDatasheet
package_outline_length_max20.9 (0.553.0) mm (Inches)maxDatasheet
package_outline_width_min2.54 (0.100)minDatasheet
package_outline_length_min20.9 (0.553.0) mm (Inches)minDatasheet
input_voltage_typ18.3 (1.78) VDatasheet
input_voltage_max18.3 (1.78) VmaxDatasheet
input_voltage_min18.3 (1.78) VminDatasheet
switching_frequency_typ50HzDatasheet
output_current_typ80 (0,5) ADatasheet
thermal_impedancejunctiontocase_typ52=C°Datasheet
forward_voltage_typ2.54 (0.100) VDatasheet
forward_voltage_max2.54 (0.100) VmaxDatasheet
forward_voltage_min2.54 (0.100) VminDatasheet
gate_voltage_typ80 (0,5) VDatasheet
gate_current_typ(0.08) ADatasheet
thermal_impedancejunctiontocase_min52=C°minDatasheet
power_dissipation_typ(0.33) WDatasheet
case_temperature_max150°CmaxDatasheet
junction_temperature_max150°CmaxDatasheet
case_temperature_min25°CminDatasheet
junction_temperature_typ45°CDatasheet
ambient_temperature_max150°CmaxDatasheet
ambient_temperature_typ45°CDatasheet

When To Use

The CLB40I1200PZ-TUB is suitable for use in high-power switching applications where a high current rating and fast switching times are required. The device can be used as a replacement for IGBTs or other power devices in applications such as:

  • Motor control units
  • Power supplies
  • Renewable energy systems

In particular, the CLB40I1200PZ-TUB is well-suited for use in 3-phase AC systems where high current ratings and fast switching times are required. The device’s high current rating (average_forward_current_max_at_125_celsius: 40 A) makes it an ideal choice for applications such as motor control units and power supplies.

When Not To Use

The CLB40I1200PZ-TUB should not be used in applications where:

  • High voltage ratings are required. The device has a maximum repetitive reverse/forward blocking voltage of 1200 V (input_voltage_max_repetitive: 1200 V).
  • Low switching times are required. The device’s minimum turn-off time is 150 μs (t_turnoff_time_typ: 150 µs).

In these cases, other power devices such as IGBTs or MOSFETs with higher voltage ratings and faster switching times may be more suitable.

Application Notes

When using the CLB40I1200PZ-TUB, note the following:

  • The device switches at a node that requires the smallest loop area to minimize parasitic inductance and resistance.
  • Pin 2 is noise-sensitive and should be kept away from noisy signals.
  • A heat sink is recommended for high-power applications (total_power_dissipation_at_25_celsius: 310 W).

Gotchas

Failure Mode 1:

  • Engineer mistake: Using a gate drive circuit with an inadequate current rating, resulting in incomplete switching.
  • Actual failure mode: The device fails to switch completely, leading to reduced efficiency and potentially causing overheating.
  • Fix/avoidance: Use a gate drive circuit with a sufficient current rating (gate_current_typ: 0.08 A).

Failure Mode 2:

  • Engineer mistake: Not properly thermal managing the device during high-power operation.
  • Actual failure mode: The device overheats, leading to reduced lifespan and potentially causing permanent damage.
  • Fix/avoidance: Use a heat sink to maintain optimal operating temperature (total_power_dissipation_at_25_celsius: 310 W).