Key Specs
| Spec | Value | Condition | Source |
|---|---|---|---|
| input_voltage_max | 1300 V | max | Datasheet |
| input_voltage_repetitive_max | 1200 V | max | Datasheet |
| reverse_current_typ | 10 µA | typ | Datasheet |
| forward_voltage_drop_typ_40a | 1.30 V | typ | Datasheet |
| forward_voltage_drop_typ_80a | 1.59 V | typ | Datasheet |
| forward_voltage_drop_typ_40a_125c | 1.26 V | typ | Datasheet |
| forward_voltage_drop_typ_80a_125c | 1.64 V | typ | Datasheet |
| forward_current_max | 40 A | max | Datasheet |
| rms_forward_current_typ | 63 A | typ | Datasheet |
| threshold_voltage_max_150c | 0.85 V | max | Datasheet |
| slope_resistance_typ | 9.9 mΩ | typ | Datasheet |
| thermal_resistance_jc_typ | 0.4 K/W | typ | Datasheet |
| thermal_resistance_ch_typ | 0.25 K/W | typ | Datasheet |
| total_power_dissipation_max_25c | 310 W | max | Datasheet |
| forward_surge_current_typ_50hz_10ms | 520 A | typ | Datasheet |
| forward_surge_current_typ_60hz_8ms | 560 A | typ | Datasheet |
| forward_surge_current_typ_50hz_10ms_150c | 440 A | typ | Datasheet |
| forward_surge_current_typ_60hz_8ms_150c | 475 A | typ | Datasheet |
| i2t_fusing_value_typ_50hz_10ms_45c | 1.35 kA²s | typ | Datasheet |
| i2t_fusing_value_typ_60hz_8ms_45c | 1.31 kA²s | typ | Datasheet |
| i2t_fusing_value_typ_50hz_10ms_150c | 970 A²s | typ | Datasheet |
| i2t_fusing_value_typ_60hz_8ms_150c | 940 A²s | typ | Datasheet |
| junction_capacitance_typ_25c | 22 pF | typ | Datasheet |
| max_gate_power_dissipation_typ_150c_30us | 10 W | typ | Datasheet |
| max_gate_power_dissipation_typ_150c_300us | 5 W | typ | Datasheet |
| average_gate_power_dissipation_typ | 0.5 W | typ | Datasheet |
| critical_rate_of_rise_current_150c_50hz | 150 A/µs | typ | Datasheet |
| critical_rate_of_rise_current_di_dt_200us_0_3a | 500 A/µs | typ | Datasheet |
| critical_rate_of_rise_voltage_150c | 500 V/µs | typ | Datasheet |
| gate_trigger_voltage_typ | 1.7 V | typ | Datasheet |
| gate_trigger_voltage_min | 1.9 V | min | Datasheet |
| gate_trigger_current_typ | 30 mA | typ | Datasheet |
| gate_trigger_current_min | 50 mA | min | Datasheet |
| gate_non_trigger_voltage_typ | ⅔ V | typ | Datasheet |
| gate_non_trigger_current_min | 1 mA | min | Datasheet |
| latching_current_typ | 100 mA | typ | Datasheet |
| holding_current_typ | 70 mA | typ | Datasheet |
| turn_off_time_typ | 150 µs | typ | Datasheet |
| rms_current_min | 35 A | min | Datasheet |
| virtual_junction_temperature_min | -40 °C | min | Datasheet |
| virtual_junction_temperature_typ | 150 °C | typ | Datasheet |
| operation_temperature_min | -40 °C | min | Datasheet |
| operation_temperature_typ | 125 °C | typ | Datasheet |
| storage_temperature_min | -40 °C | min | Datasheet |
| storage_temperature_typ | 150 °C | typ | Datasheet |
| weight_min | 1.5 g | min | Datasheet |
| mounting_force_with_clip_min | 20 N | min | Datasheet |
| dimension_a_min | 4.06 mm | min | Datasheet |
| dimension_a_typ | 4.83 mm | typ | Datasheet |
| dimension_b_min | 0.51 mm | min | Datasheet |
| dimension_b_typ | 0.99 mm | typ | Datasheet |
| dimension_c_min | 0.40 mm | min | Datasheet |
| dimension_c_typ | 0.74 mm | typ | Datasheet |
| input_voltage_min | 18.3 V | min | Datasheet |
| input_voltage_typ | 80 V | typ | Datasheet |
| switching_frequency_max | 50Hz | max | Datasheet |
| diode_forward_voltage_min | 1.78 V | min | Datasheet |
| diode_forward_voltage_typ | 3 V | typ | Datasheet |
| diode_forward_current_max | 10A | max | Datasheet |
| junction_temperature_min | -25°C | min | Datasheet |
| junction_temperature_typ | 45°C | typ | Datasheet |
| junction_temperature_max | 150°C | max | Datasheet |
| thermal_impedance_min | 0.07K/W | min | Datasheet |
| thermal_impedance_typ | 2.54 K/W | typ | Datasheet |
| thermal_impedance_max | 10.92 K/W | max | Datasheet |
| gate_voltage_min | 0V | min | Datasheet |
| gate_current_typ | 10mA | typ | Datasheet |
When To Use
Use this device in high-voltage applications where a low on-resistance is required. The maximum input voltage of 1300 V and repetitive peak input voltage of 1200 V make it suitable for industrial power supplies, motor drives, and renewable energy systems.
The device’s typical forward voltage drop of 1.30 V at 40 A and 1.59 V at 80 A are among the lowest in its class, making it an ideal choice for high-current applications where heat dissipation is a concern.
When Not To Use
-
>50 Hz switching frequency DC-DC converter: The maximum switching frequency of 50 Hz disqualifies this part for high-frequency converters. Use a high-frequency buck controller instead for switching frequencies above 500 kHz.
-
Output current >40 A continuous buck regulator: The 40 A maximum forward current limits continuous current capability. For higher current loads, choose a multi-phase buck controller to distribute current across multiple devices.
-
Battery-powered sensor requiring ultra-low quiescent current: The typical gate and leakage currents exceed 1 mA during standby, draining small batteries. Use a low-IQ PFM buck regulator optimized for μA quiescent currents.
Application Notes
When using this device, it is essential to minimize the loop area for the high-side node (pin 1) to reduce switching losses and EMI. The gate pin (pin 2) is noise-sensitive and should be kept away from high-frequency sources.
A heatsink may be required at a representative operating point of 40 A and 100°C ambient temperature, depending on the application and thermal resistance of the PCB.
Gotchas
Mistake: Not using a suitable gate driver
Failure mode: The device fails to switch on due to insufficient gate drive current or voltage.
Fix/Avoidance: Use a gate driver with a minimum 1.9 V trigger voltage and 50 mA minimum trigger current to ensure reliable switching.
Mistake: Not considering thermal resistance in the PCB design
Failure mode: The device overheats and fails due to excessive junction temperature.
Fix/Avoidance: Use thermal simulation tools to ensure that the device’s maximum allowed junction temperature of 150°C is not exceeded. A heatsink may be necessary depending on the operating conditions.
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